| PART |
Description |
Maker |
| MT58L512L18F MT58L256L32F |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
| MT58L256L36P MT58L256L32P MT58L256V32P MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
|
Micron Technology
|
| MT58L512L18D MT58L256L32D MT58L1MV18D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
|
MICRON[Micron Technology]
|
| IC61SF25636T IC61SF25636D IC61SF25632T IC61SF25632 |
SYNCHRONOUS STATIC RAM, Flow Through
From old datasheet system
8Mb SyncBurst Flow through SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| MT58L128L18F |
128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脉冲静态RAM)
|
Micron Technology, Inc.
|
| MT58L128L32F1 MT58L128V32F1 MT58L128V36F1 MT58L256 |
4MB: 256K X 18, 128K X 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| GS78108B-12 GS78108B-12I GS78108B GS78108B-10 GS78 |
1M x 8 8Mb Asynchronous SRAM 1M X 8 STANDARD SRAM, 15 ns, PBGA119
|
GSI Technology, Inc.
|
| MT58L128L32D1 |
128K x 32锛?.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb锛?.3V杈??/杈??锛??姘寸嚎寮????惊???娑???╋??????????瀛???ī
|
Micron Technology, Inc.
|
| DS1265W-100IND |
3.3V 8Mb Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
| GS78116B-10 GS78116B-10I GS78116B-12I GS78116B-15 |
512K x 16 8Mb Asynchronous SRAM
|
GSI Technology
|
| GS78132AB-10I GS78132AB-15I GS78132AB-8 GS78132AB- |
256K x 32 8Mb Asynchronous SRAM 256K X 32 STANDARD SRAM, 8 ns, PBGA119
|
GSI Technology, Inc.
GSI[GSI Technology]
|
| DS2065W DS2065W-100 |
3.3V Single-Piece 8Mb Nonvolatile SRAM
|
Maxim Integrated Products
|
